Subscribe NowTower and Paragon announce development completion of XNN®-based PA booster
Tower and Paragon announce development completion of XNN®-based PA booster
April 17, 2007
Tower Semiconductor, Ltd. (NASDAQ: TSEM; TASE: TSEM), an independent specialty wafer foundry, and Paragon Communications Ltd., a provider of solutions for enhancing performance of wireless power amplifiers and systems, recently announced the manufacturing of XNN®-based Power Amplifier (PA) booster.
This innovative product is based on Paragon’s patented technology to monitor the Radio Frequency (RF) envelope and modulate the amplification. The product attains up to 6dB improvement in output power, as well as major efficiency and heat dissipation improvements over existing solutions. The XNN PA booster chip will be manufactured on Tower’s 0.18-micron process, including its RF-CMOS feature, at Tower’s FAB2 facility.
“With Tower’s state-of-the-art RF-CMOS process and invaluable technical support including design services, we were able to attain outstanding performance enhancements to Wi-Fi and WiMax PA’s of up to 6dB in output power, 50% in efficiency and heat dissipation, while maintaining the same linearity criteria of the PA,” said Zeev Cohen, VP R&D, Paragon. “We have proven on silicon, by using complex test chip, that our concept works and our product will attain the performance targets. Tower has provided a one-stop shop in terms of capabilities from design to manufacturing. Tower’s teams assisted in taking the Paragon concept from patent to silicon reality through Tower Design services group and RF specialists. We are very pleased with our partnership with Tower and look forward to a long-term business relationship.”
“We are pleased that Paragon made effective use of our RF-CMOS capabilities. Our technology helps in enabling the XNN functionality, performance and chip-level integration thereby facilitating attainment of the product goals,” said Yossi Netzer, general manager, RF and Mixed Signal product line, Tower. “Paragon is an example of a dynamic young company, that benefits from the close cooperation with Tower’s design and manufacturing teams, thereby yielding excellent technical results and setting the foundations for business success.”
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“With Tower’s state-of-the-art RF-CMOS process and invaluable technical support including design services, we were able to attain outstanding performance enhancements to Wi-Fi and WiMax PA’s of up to 6dB in output power, 50% in efficiency and heat dissipation, while maintaining the same linearity criteria of the PA,” said Zeev Cohen, VP R&D, Paragon. “We have proven on silicon, by using complex test chip, that our concept works and our product will attain the performance targets. Tower has provided a one-stop shop in terms of capabilities from design to manufacturing. Tower’s teams assisted in taking the Paragon concept from patent to silicon reality through Tower Design services group and RF specialists. We are very pleased with our partnership with Tower and look forward to a long-term business relationship.”
“We are pleased that Paragon made effective use of our RF-CMOS capabilities. Our technology helps in enabling the XNN functionality, performance and chip-level integration thereby facilitating attainment of the product goals,” said Yossi Netzer, general manager, RF and Mixed Signal product line, Tower. “Paragon is an example of a dynamic young company, that benefits from the close cooperation with Tower’s design and manufacturing teams, thereby yielding excellent technical results and setting the foundations for business success.”
Tower Semiconductor Ltd., established in 1993, is a pure-play independent specialty wafer foundry manufacturing integrated circuits with geometries ranging from 1.0 to 0.13-Micron.
In addition to digital CMOS process technology, Tower offers advanced non-volatile memory solutions, mixed-signal & RF-CMOS, and CMOS image-sensor technologies.
CONTACT INFORMATION
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Mr. Michael Admon (Spokesperson)
Israel Export & International Cooperation Institute
Director Industry & Construction Department
29 Hmered St.
Tel Aviv
Israel
+972-3-5142809 (office)
+972-3-5142881 (fax)
+972-54-4578626(cell)
http: //www.export.gov.il/eng/SubIndex.asp?CategoryID=289
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